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VBE 100-06NO7
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED) in ECO-PAC 2
Preliminary data sheet
IdAV = 100 A VRRM = 600 V trr = 35 ns
VRSM V 600
VRRM V 600
Typ
PS16
~L 9 ~ K10
VBE 100-06NO7
EG 1 Pin arangement see outlines
B3
Symbol IdAV IdAVM IFSM
Conditions TC = 85C, module TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 100 100 600 640 520 555 1800 1720 1350 1295 -40...+150 150 -40...+125 A A A A A A A2 s A2 s A2 s A2 s C C C V~ V~
Features * Package with DCB ceramic base plate in low profile * Isolation voltage 3000 V~ * Planar passivated chips * Low forward voltage drop * Leads suitable for PC board soldering Applications * Supplies for DC power equipment * Input and output rectifiers for high frequency * Battery DC power supplies * Field supply for DC motors Advantages * Space and weight savings * Improved temperature and power cycling capability * Small and light weight * Low noise switching Dimensions in mm (1 mm = 0.0394")
I2t
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthCH IRM trr a dS dA 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
3000 3600
Mounting torque (M4) typ. Conditions VR = VRRM VR = VRRM IF = 60 A TVJ = 25C TVJ = TVJM TVJ = 25C
1.5-2/14-18 Nm/lb.in. 24 g Characteristic Values
typ. max.
0.1 2.5 2.04
mA mA V
for power-loss calculations only per diode; DC current per diode, DC current, typ. IF = 130 A, -diF/dt = 100 A/s VR = 100 V, TVJ = 100C IF = 1 A; -di/dt = 300 A/s; VR = 30 V, TVJ = 25C Max. allowable acceleration creeping distance on surface (pin to heatsisnk) strike distance in air (pin to heatsisnk)
1.09 V 4.3 m 0.8 K/W 0.2 K/W 6.8 35 50 11.2 9.7 A ns m/s2 mm mm
Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
1-2
241
VBE 100-06NO7
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF
DWLP55-06
4000 nC
TVJ = 25C TVJ = 100C TVJ = 150C
TVJ = 100C VR = 300 V
80 A 60 IRM
TVJ = 100C VR = 300 V
3000 Qr 2000
IF = 120 A IF = 60 A IF = 30 A
IF = 120 A IF = 60 A IF = 30 A
40
1000
20
2
V
0 100
DWLP55-06
0 0 200 400
DWLP55-06
A/s 1000 -diF/dt
600 A/s 1000 800 -diF/dt
B3
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
140 ns 130
TVJ = 100C VR = 300 V
Fig. 3 Peak reverse current IRM versus -diF/dt
20 V VFR 15
VFR
2.0
1.6 s tfr 1.2
1.5 Kf 1.0
IRM
trr 120 110 100
IF = 120 A IF = 60 A IF = 30 A
trr
10
TVJ = 100C IF = 60 A
0.8
0.5
Qr
DWLP55-06
5 90 80 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt
DWLP55-06
0.4
0.0
0 0 200 400
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
DWLP55-06
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt
0.001
0.0001 0.00001
VUE 130-06
0.0001
0.001
0.01
0.1 t
s
1
Fig. 7 Typical transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
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241

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